Study on electrical properties of Ni-doped SrTiO3 ceramics using impedance spectroscopy |
| |
| Authors: | S K Rout S Panigrahi J Bera |
| |
| Affiliation: | (1) Department of Physics, National Institute of Technology, 769 008 Rourkela, India;(2) Department of Ceramic Engineering, National Institute of Technology, 769 008 Rourkela, India |
| |
| Abstract: | The ceramics, SrTiO3 (ST) and 0.4, 0.8 atom % Ni doped SrTiO3, were prepared by solid state reaction route. The average grain size of undoped and doped samples was measured and found
to be 1.2, 1.9 and 3.7 μm, respectively. The impedance measurements were conducted at 400–600°C to separate grain and grain
boundary contributions. The grain and grain boundaries relaxation frequencies were shifted to higher frequency with temperature.
Bulk resistance of doped and undoped ST ceramics was more or less the same. Single grain boundary resistance of doped sample
was higher than that of undoped one, indicating that GB resistance increases with acceptor doping. Activation energies were
calculated to confirm the same. |
| |
| Keywords: | Ni doped SrTiO3 impedance spectroscopy grain grain boundary acceptor |
| 本文献已被 SpringerLink 等数据库收录！ |
|
