Microwave multiple-state resonant tunneling bipolar transistors |
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| Authors: | Lunardi L.M. Sen S. Capasso F. Smith P.R. Sivco D.L. Cho A.Y. |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ; |
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| Abstract: | Fabrication and microwave performance of a multiple-state resonant-tunneling bipolar transistor (RTBT) are presented. This transistor exhibits a maximum DC current gain of 60 at room temperature and a cutoff frequency of 24 GHz. Frequency multiplication by a factor of five has been demonstrated with a single transistor |
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