| MOS晶体管技术 |
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| 引用本文： | 牛宏亮,张云娟.MOS晶体管技术[J].国外电子元器件,2008,16(7). |
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| 作者姓名： | 牛宏亮 张云娟 |
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| 作者单位： | 西安铁路职业技术学院,陕西西安,710014 |
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| 摘 要： | 简要回顾MOS晶体管一些具有代表性的技术进展,分析了其在将来超大规模集成电路(ULSI)应用中的主要限制.从材料以及器件结构两个方向分别阐述了突破现有MOS技术而最有希望被将来ULSI工业所采用的新型晶体管技术.
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| 关 键 词： | 晶体管 高介电常数材料 器件结构 集成电路 |
MOS transistor technology |
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| NIU Hong-liang,ZHANG Yun-juan.MOS transistor technology[J].International Electronic Elements,2008,16(7). |
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| Authors: | NIU Hong-liang ZHANG Yun-juan |
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| Affiliation: | NIU Hong-liang,ZHANG Yun-juan(Xi\'an Railway Vocational &Technical Institute,Xi\'an 710014,China) |
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| Abstract: | This paper briefly reviewed some of the MOS transistors representative of the technical progress.The main constraints of its applications in the future ultra-large-scale integrated circuits(ULSI) are analyzed.New transistor technology,separately elaborated the breakthrough in the current MOS technology from the materials and the devices structure,are introduced.Three-dimensional transistor structure may be the most promising technology in the future ultra-large-scale integrated circuits(ULSI). |
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| Keywords: | transistor high dielectric constant materials device structure integrated circuit |
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