Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition |
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Authors: | IL Kim Jong-Seok Kim Oh-Seung Kwon Sung-Tae Ahn John S Chun Won-Jong Lee |
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Affiliation: | (1) Department of Materials Science and Engineering, Korea Advanced Institute Science and Technology, 305-701 Taejon, Republic of Korea;(2) Samsung Electronics Co., Ltd, San-24, Nongseo-lee, Kiheung-eup, Yongin-gun, 440-600 Kyungki-do, Republic of Korea |
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Abstract: | The tantalum oxide thin films with a thickness of 14 nm were deposited at 95°C by electron cyclotron resonance plasma enhanced
chemical vapor deposition (ECRPECVD), and annealed at various temperatures (700∼850°C) in O2 and N2 ambients. The microstructure and composition of the tantalum oxide thin films and the growth of interfacial silicon oxide
layer were investigated and were related to the electrical characteristics of the film. Annealing in an O2 ambient led to a high dielectric constant (εr(Ta2O5) = 24) as well as a small leakage current (Ebd = 2.3 MV/cm), which were due to the improved stoichiometry and the decreased impurity carbon content. Annealing in an N2 ambient resulted in poor and nonuniform leakage current characteristics. The as-deposited tantalum oxide films were crystallized
into δ-Ta2O5 after annealing at above 750°C regardless of the ambient. The leakage current of the film abruptly increased after annealing
at 850°C probably because of the stress caused by thermal expansion or contraction. |
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Keywords: | Annealing electrical properties tantalum oxide thin films |
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