| 磷化铟功率绝缘栅场效应晶体管及其前景探讨 |
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| 引用本文： | 张汉三.磷化铟功率绝缘栅场效应晶体管及其前景探讨[J].微纳电子技术,1992(2). |
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| 作者姓名： | 张汉三 |
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| 作者单位： | 机电部第13研究所 石家庄 |
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| 摘 要： | 与GaAs相比,InP有高的峰值速度、低的离化系数和良好的热导率;与MESFET相比,绝缘栅场效应晶体管(MISFET)有高得多的栅-源、栅-漏击穿电压和较低的泄漏电流,MIS结构中的电荷积累还会导致沟道电流的显著增加。因此,InPMISFET对微波功率放大应用来说,是一种有吸引力的器件。本文介绍了这种器件的研究现状,并探讨了其发展前景。
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| 关 键 词： | 磷化铟 绝缘栅场效应晶体管 半导体工艺 |
InP PoWer M ISFET and Its Outlook |
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| Zhang Hansan.InP PoWer M ISFET and Its Outlook[J].Micronanoelectronic Technology,1992(2). |
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| Authors: | Zhang Hansan |
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| Abstract: | InP MISFET is an attractive device for microwave power amplification, since InP has high peak velocity, low ionisation coefficient and good thermal conductivity in comparision with GaAs, also because the MISFET has much higher gate-source and gate-drain breakdown voltages and lower leakage current as compared to the MESFET. Charge accumulation in the MIS structure also can result in a substantial increase in channel current. This paper reviews the present development status of this device and discusses its outlook. |
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| Keywords: | InP MISFET Semiconductor technology |
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