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| Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes | |
| 作者姓名： | Yang Hui Chen Lianghui Zhang Shuming Chong Ming Zhu Jianjun Zhao Degang Ye Xiaojun Li Deyao Liu Zongshun Duan Lihong .. |
| 作者单位： | 中国科学院半导体研究所集成光电子学国家重点联合实验室 北京100083 (杨辉，张书明，朱建军，赵德刚，叶小军，李德尧，刘宗顺，段俐宏，王海，史永生，陈俊，刘素英，金瑞琴)，中国科学院半导体研究所纳米光电子学实验室 北京100083 (陈良惠，种明，赵伟，曹青，孙捷)，中国科学院半导体研究所集成光电子学国家重点联合实验室 北京100083(梁骏吾) |
| 基金项目： | 国家高技术研究发展计划(863计划) |
| 摘 要： | Studies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the fullwidth half maximum of 180″ and 185″ for (0002) symmetric reflection and (10-12) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes. |
| 关 键 词： | 有机化学气相沉积 GaN基激光器 多量子阱 脊形结构 阈值电流密度 metalorganic chemical vapor deposition GaN-based laser diodes multiple quantum wells ridge geometry structure threshold current density 紫光激光器 材料生长 器件 Laser Diodes Fabrication Device Growth output light power threshold current density Gain ridge geometry waveguide facet mirrors pulse current injection film room temperature |
Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes |
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| Yang Hui,Chen Lianghui,Zhang Shuming,Chong Ming,Zhu Jianjun,Zhao Degang,Ye Xiaojun,Li Deyao,LIU Zongshun,Duan Lihong,Zhao Wei,Wang Hai,Shi Yongsheng,Cao Qing,Sun Jie,Chen Jun,Liu Suying,Jin Ruiqin,Liang Junwu.Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes[J].Chinese Journal of Semiconductors,2005,26(2):414-417. | |
| Authors: | Yang Hui Chen Lianghui Zhang Shuming Chong Ming Zhu Jianjun Zhao Degang Ye Xiaojun Li Deyao LIU Zongshun Duan Lihong Zhao Wei Wang Hai Shi Yongsheng Cao Qing Sun Jie Chen Jun Liu Suying Jin Ruiqin Liang Junwu |
| Abstract: | |
| Keywords: | metalorganic chemical vapor deposition GaN-based laser diodes multiple quantum wells ridge geometry structure threshold current density |
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