Electron microscope studies of InxGav1?xAs/GaAs/Si grown by metalorganic chemical vapor deposition |
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| Authors: | K Kamei W M Stobbs K Fujita |
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| Affiliation: | (1) Research and Development Center, Sumitomo Metal Industries Ltd., 1-8 Fuso-cho, Amagasaki 660, Japan;(2) Department of Materials Science & Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK;(3) ATR Optical and Radio Communications Research Laboratories Seika-cho Soraku-gun, 619-02 Kyoto, Japan |
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| Abstract: | The microstructure of InxGa1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100)
at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy.
The variations in resultant island morphology and strain as a function of the In content were examined through the comparison
of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island
relaxation process changes for high In content. |
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| Keywords: | GaAs/Si heteroepitaxy InGaAs metalorganic chemical vapor deposition (MOCVD) transmission electron microscopy (TEM) |
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