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Electrical properties of (Bi3.5La0.5)Ti3O12 thin-films prepared by liquid source misted chemical deposition |
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| Authors: | Hyun Jin Chung Suk Jin Chung Min Ku Jeon Seong Ihl Woo |
| Affiliation: | (1) Department of Chemical and Biomolecular Engineering & Center for Ultramicrochemical Process Systems (CUPS), Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, 305-701 Daejeon, Korea;(2) Present address: Memory TG-2 process Team, R&D Division, Hynix Semiconductor Inc., #1 Hyangjeong-dong, Hungduk-gu, 361-725 Cheongju-si, Korea;(3) Present address: Semiconductor R&D center, Samsung electronics Co. Ltd., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-Gun, 449-900 Kyungki-Do, Korea |
| Abstract: | The ((Bi3.5La0.5)Ti3O12(BLT) thin-films used in this study were fabricated on a Pt(111)/SiO2/Si(100) substrate by a Liquid Source Misted Chemical Deposition (LSMCD) technique. X-ray diffraction patterns showed that the BLT films were crystallized and no other phases were observed when annealed above 650 ‡C. Grain size and remnant polarizations increased with increase in the annealing temperature, while leakage current densities decreased. The remnant polarizations (Pr) increased from 2.0 to 4.8 and 19.0 μC/cm2 with increase in the annealing temperature from 650 to 700 and 750 ‡C, respectively. The BLT films annealed at 700 ‡C in O2 showed a good fatigue resistance of reduced polarization by 10% after 109 switching cycles when 9 V of bipolar voltage was applied at a frequency of 40 kHz. |
| Keywords: | Liquid Source Misted Chemical Deposition ((Bi3 5La0 5)Ti3O12 (BLT) Film Bismuth Titanate Ferroelectric Thin-film |
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