Q and V band power InGaAs MESFETs |
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Authors: | Wang G.W. Chang Y. |
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Affiliation: | Sci. Center, Rockwell Int., Thousand Oaks, CA, USA; |
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Abstract: | Excellent power performance at 44 and 60 GHz demonstrated by 0.25 mu m gate InGaAs MESFETs is reported. From small-signal S-parameter measurements, these devices typically have extrinsic f/sub t/ greater than 100 GHz. At 1 dB compression point, a 150 mu m wide MESFET shows a power added efficiency of 33% with an output power of 60.8 mW (0.43 W/mm) at 44 GHz. For 200 mu m wide devices, the power added efficiency was measured to be 19% with an output power of 82 mW (0.41 W/mm) at 60 GHz. These results indicate that InGaAs MESFETs are viable millimetre-wave power devices.<> |
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