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多离子束反应共溅射技术制备(Pb,La)TiO3铁电薄膜及薄膜物化性能表征
引用本文:肖定全 朱建国. 多离子束反应共溅射技术制备(Pb,La)TiO3铁电薄膜及薄膜物化性能表征[J]. 高技术通讯, 1994, 4(4): 9-12
作者姓名:肖定全 朱建国
作者单位:四川大学材料科学系,四川大学原子核科学与技术研究所
摘    要:研制了多离子束反应溅射技术并运用该技术在多种衬底上制备晶态(Pb,La)TiO3铁电薄膜。运用多种分析技术对铁电薄膜的物化性能进行了表征。发现在铁电薄膜的近表面有富铅层。测试了铁电薄膜的电滞回线、矫顽场、折射率、吸收系数等电学和光学参数。利用该技术可在较低衬底温度下在位制备组分可调、附着力强的外延或高度择优取向的铁电薄膜。

关 键 词:离子束 反应 溅射 铁电薄膜 薄膜

The Preparation and Characterization of (Pb, La)TiO3 FerroelectricThin Films Deposited by Multi-Ion-Beam Reactive Technique
Xiao Dingquan,Zhu Jianguo,Qian Zhenghong,Zhu Jumu,Guo Huacong,Xe Bizheng,Zhang Wen,Cat Bac im( Institute of Nuclear Science and Technology,Sichuan Unive. The Preparation and Characterization of (Pb, La)TiO3 FerroelectricThin Films Deposited by Multi-Ion-Beam Reactive Technique[J]. High Technology Letters, 1994, 4(4): 9-12
Authors:Xiao Dingquan  Zhu Jianguo  Qian Zhenghong  Zhu Jumu  Guo Huacong  Xe Bizheng  Zhang Wen  Cat Bac im( Institute of Nuclear Science  Technology  Sichuan Unive
Affiliation:(received Dec. 13,1 993 )Xiao Dingquan,Zhu Jianguo,Qian Zhenghong,Zhu Jumu,Guo Huacong,Xe Bizheng,Zhang Wen,Cat Bac im(Department of Material Science,Sichuan University,Chengdu 610064 )(* Institute of Nuclear Science and Technology,Sichuan Unive
Abstract:erroelectric thin films of lanthanirmumodified lead titanate (Ph, La)TiO3 were successfully grown onmany substrates by multi-ion-beam reactive cosputtering (MIBRECS)technique. Some analysis techniques,such as x-ray diffraction (XRD),x-ray photoelectron spectroscopy (XPS), reflection high-energy electrondiffraction (RHEED ), energy-dispersive analysis of x-ray (EDAX ), and Auger electron spectroscopy(AES) were performed for characterization of (Ph, La)TiO3 ferroelectric thin films. It was found thatthe chemical composion of the films in the near surface was Ph enriched. D-Ehysteresis loop was measuredby modified Sawyer-Tower circuit. Such electric and optical parameters as remanent polarization (Pr),coercive field (Ec ), refractive index (n ), and absorption coefficient (a ) were measured. MIBRECStechnique seems a promising process for fabricating multicomponent oxide thin films in lower substratetemperature with high reproducibility.
Keywords:Multiuion-beam reactive cosputtering   Ferroelectric thin film  PLT  
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