| 反应溅射制备非晶Al2O3薄膜的介电特性 |
| |
| 引用本文： | 赵登涛,狄国庆,朱炎. 反应溅射制备非晶Al2O3薄膜的介电特性[J]. 材料科学与工程学报, 2000, 18(3): 80-83 |
| |
| 作者姓名： | 赵登涛 狄国庆 朱炎 |
| |
| 作者单位： | 苏州大学物理系薄膜材料实验室,江苏,苏州,215006 |
| |
| 摘 要： | 在氧气、氩气的混合气氛中,利用反应射频磁控溅射制备了厚度在100到10纳米的非晶氧化铝薄膜.通过Al-Al2O3-Al电容器研究了此非晶薄膜的介电性质.
|
| 关 键 词： | 反应射频磁控溅射 介电性质 非晶 氧化铝薄膜 |
Dielectric Characteristics of Amorphous Alumina Film Fabricated by Reactive Sputtering |
| |
| ZHAO Deng-tao,DI Guo-qing,ZHU Yan. Dielectric Characteristics of Amorphous Alumina Film Fabricated by Reactive Sputtering[J]. Journal of Materials Science and Engineering, 2000, 18(3): 80-83 |
| |
| Authors: | ZHAO Deng-tao DI Guo-qing ZHU Yan |
| |
| Abstract: | Amorphous alumina thin films with thickness from 100 to 10 nm are fabricated by reactive RF magnetron sputtering in a O-2 and Ar mixture. And its dielectric characteristics are studied on the base of Al|Al-2O-3|Al capactiors. |
| |
| Keywords: | Reactive RF magnetron sputtering dielectric characteristics amorphous alumina film. |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
