| Effect of Film Thickness on Properties of a—Si：H Films |
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| 引用本文： | QIANXiang－zhong CHENGJian－bo.Effect of Film Thickness on Properties of a—Si：H Films[J].半导体光子学与技术,2003,9(1):37-40. |
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| 作者姓名： | QIANXiang－zhong CHENGJian－bo |
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| 作者单位： | [1]Dpet.ofPhys.andElectron,Inform.Sci.,WenzhouNormalCollege,Wenzhou325027,CHN [2]SchoolofOptoelectron,inform.,UniversityofElectron.Sci.andTechn.,Chengdu610054,CHN |
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| 基金项目： | Natural Science Foundation of the Education Department of Anhui Province (2002 kj 281) |
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| 摘 要： | The a -Si:H film with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition contitions.The effect of diferent thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity ,photoconductivity and threshold voltage increase,the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ration of on/off state first maximize and then reduce.
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| 关 键 词： | 光学特性 电子学特性 薄膜厚度 非晶态硅氢薄膜 |
| 收稿时间： | 2002/4/5 |
Effect of Film Thickness on Properties of a-Si∶H Films |
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| Abstract: | The a-Si∶H films with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce. |
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| Keywords: | Amorphous Si∶H film Film thickness Optical properties Electrical properties |
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