Study of microwave damage effect on HEMT low noise amplifier under different drain voltage bias |
| |
| Affiliation: | 1. Lab of Power Semiconductor Devices &Ics, Beijing University of technology, Beijing 100124, China;2. Shenzhen Jihua Micro Special Electronics Limited Company, Shenzhen 518000, China;1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;2. Beijing institute of Spacecraft System Engineering, Beijing 100094, China;1. Faculty of Electronic Engineering, University of Ni?, Aleksandra Medvedeva 14, 18000 Ni?, Serbia;2. Faculty of Civil Engineering and Architecture, University of Ni?, Aleksandra Medvedeva 14, 18000 Ni?, Serbia;3. Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, Bulgaria;4. Serbian Academy of Sciences and Arts, Branch Ni?, Ni?, Serbia |
| |
| Abstract: | The microwave damage effect on high electron mobility transistor (HEMT) low noise amplifier (LNA) under different drain voltage bias is studied using TCAD simulation and experiments. Simulation and experimental results suggest that the damage power thresholds and damage locations of single stage LNA under different drain voltage bias are almost the same. Nevertheless, the output power under zero drain bias is about 5.6 dB higher than it under normal (3 V) drain bias with the injection of large power microwave pulses. In Addition, the output power relative to it under normal drain bias decreases linearly with the increase of drain bias, following the function of PdB = ? 1.85Vds + 5.7. For multi-stage LNA, the observation using optical microscope reveals that the first and second stage HEMT of LNA under zero drain bias are both damaged while only first stage HEMT of LNA under normal bias is damaged with the injection of same large power microwave pulses, which is consistent with simulated output characteristics results. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
