A closed-form trapped-charge-included drain current compact model for amorphous oxide semiconductor thin-film transistors |
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| Affiliation: | 1. College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China;2. Graduate Institute of Electrical Engineering, National Kaohsiung First University of Science and Technology, Taiwan;1. College of Computer, National University of Defense Technology, Changsha 410073, China;2. Hunan University of Humanities Science and Technology, Loudi 417000, China;1. Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering, Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia;2. Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia;1. School of Biomedical Engineering, Taipei Medical University, Taipei 11031, Taiwan;2. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan |
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| Abstract: | A closed-form drain current compact model for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), including the influence from trapped charges, is presented in this paper. Accounting for both channel and interface trapped charges in this model, we explicitly solve the inherent closed-form surface potential by improving the computational efficiency of the effective charge density approach. Furthermore, based on the explicit solution of the surface potential, the expressions of the trapped and inversion charges in the channel film are derived analytically, and the drain current is integrated from the charge sheet model. Then, for the cases of the different operational voltages, the accuracy and practicability of our model are verified by numerical results of the surface potential and experimental data of the drain current in amorphous In-Ga-Zn-O TFTs, respectively. Finally, we give a discussion about the influence of the interface trapped charges on the device reliability. As a result, the model can be easily to explore the drain current behavior of the AOS TFTs for next-generation display circuit application. |
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