GaAsSb/InGaAs tunnel field effect transistor with a pocket layer

This work proposes a new GaAs_0.51Sb_0.49/In_0.53Ga_0.47As heterojunction tunnel field effect transistor (HTFET) with a 6-nm In_0.7Ga_0.3As layer (pocket) between the source and channel. Compared with InGaAs homojunction TFETs, the proposed HTFET has a steeper subthreshold swing at a higher drain current, owing to its lower source-to-channel tunnel barrier height. It has a maximum on-state current of 11.98 μA/μm at room temperature, which is more than ten times the on-state current obtained from an InGaAs homojunction TFET.