Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve |
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Affiliation: | 1. Institute of Circuits and Systems, Ningbo University, Ningbo 315211, China;2. Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China;3. College of Mathematics, Physics and Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China;1. M/A-COM Technology Solutions, Lowell, MA, USA;2. University of Parma, Parma, Italy |
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Abstract: | Sub-gap density of states (DOS) is one of the key parameters which impact both the electrical characteristics and reliability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors. So the investigation of DOS extraction is important. Here, a simplified and efficient DOS extraction method based on a single capacitance-voltage (C-V) curve is proposed. The method is verified by comparing with the results from the existing DOS extraction methods such as static current-voltage (I-V) measurement. Besides, this method is applied to extract DOS of an a-IGZO thin-film transistor with different electrical properties. This updated method is employed to explain the decrease of device turn-on voltage, which could be attributed to the DOS decrease. In summary, it is a simple method based on a single C-V curve without optical illumination, temperature dependence, accurate I-V model supporting or complicated mathematics fitting. |
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