| Fe2O3掺杂的BST/MgO铁电移相器材料 |
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| 引用本文： | 黄志文,陈洪. Fe2O3掺杂的BST/MgO铁电移相器材料[J]. 电子元件与材料, 2008, 27(7) |
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| 作者姓名： | 黄志文 陈洪 |
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| 作者单位： | 南京电子技术研究所,南京,210013;南京电子技术研究所,南京,210013 |
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| 摘 要： | 采用传统陶瓷工艺制备了Fe2O3掺杂BST/MgO铁电陶瓷材料。研究了Fe2O3掺杂量对该复合体系εr、tanδ等参数的影响。结果表明,适量的掺杂能有效改善体系的电性能。控制掺杂量x(Fe2O3)为0.1%,陶瓷介质在微波频段(S波段)的εr为100.5;tanδ约为5.3×10–3;4000V/mm偏压下的调谐性可达14.2%。采用极化理论对掺杂机理进行了探讨。
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| 关 键 词： | 无机非金属材料 Fe2O3 BST 铁电材料 移相器 |
BSTO/MgO ferroelectric phase shifter materials doped with Fe_2O_3 |
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| HUANG Zhi-wen,CHEN Hong. BSTO/MgO ferroelectric phase shifter materials doped with Fe_2O_3[J]. Electronic Components & Materials, 2008, 27(7) |
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| Authors: | HUANG Zhi-wen CHEN Hong |
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| Affiliation: | HUANG Zhi-wen,CHEN Hong ( Nanjing Research Institute of Electronics Technology,Nanjing 210013,China ) |
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| Abstract: | Fe2O3-doped BST/MgO ferroelectric ceramics materials were prepared by using traditional ceramic technique. Effects of Fe2O3-doped amount onεr and tanδ in this composite system were investigated. The results show that appropriate adulteration can effectively improve the electrical properties of the composite system .To control x(Fe2O3) to 0.1%, in microwave band (S band)the εr of ceramic is 100.5, and the tanδ is 5.3×10–3, and the tune characteristic in 4 000 V/mm bias is 14.2%. The adulteration mechanism by polarization theory is discussed. |
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| Keywords: | non-metallic inorganic material Fe2O3 BST ferroelectric material phase shifter |
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