A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices |
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Authors: | Hui Shun Chin Kuan Yew Cheong Ahmad Badri Ismail |
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Affiliation: | (1) Energy Efficient & Sustainable Semiconductor Research Group, School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia; |
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Abstract: | Recently, high-temperature power devices have become a popular discussion topic because of their various potential applications in the automotive, down-hole oil and gas industries for well logging, aircraft, space exploration, nuclear environments, and radars. Devices for these applications are fabricated on silicon carbide-based semiconductor material. For these devices to perform effectively, an appropriate die attach material with specific requirements must be selected and employed correctly. This article presents a review of this topic, with a focus on the die attach materials operating at temperatures higher than 623 K (350 °C). Future challenges and prospects related to high-temperature die attach materials also are proposed at the end of this article. |
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