In situ optical diagnostics of growing surfaces in the process of nanoheterostructure fabrication |
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Authors: | I. P. Kazakov E. V. Glazyrin S. A. Savinov V. I. Tsekhosh S. S. Shmelev |
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Affiliation: | 1.Lebedev Physical Institute,Russian Academy of Sciences,Moscow,Russia |
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Abstract: | It is demonstrated that in situ reflectance and reflectance-anisotropy measurements can be used as efficient real-time monitoring tools for all stages of the growth of heterostructures with ultrathin (few-monolayer) GaAs and AlAs layers. Changes in the layer composition at normal GaAs/AlAs interfaces in the active region of resonant-tunneling diode structures are detected with a thickness resolution on the order of one monolayer. Resonant-tunneling diodes with a peak-to-valley ratio of 3.3 and peak current density of 6.6 × 104 A/cm2 are fabricated. |
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