| 钨电极与氧化锌纳米线接触的电学特性 |
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| 引用本文： | 吉元,卫斌,王丽,张隐奇,谢雪松,吕长志,张跃飞.钨电极与氧化锌纳米线接触的电学特性[J].北京工业大学学报,2009,35(9):1235-1240. |
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| 作者姓名： | 吉元 卫斌 王丽 张隐奇 谢雪松 吕长志 张跃飞 |
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| 作者单位： | 北京工业大学,固体微结构与性能研究所,北京,100124;北京工业大学,微电子可靠性研究室,北京,100124 |
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| 基金项目： | 国家自然科学基金，北京市教委基金 |
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| 摘 要： | 为了研究单根纳米线的电学性能及基于纳米线器件的性能表征,在扫描电镜中采用微操纵仪系统,构成测试单根ZnO纳米线的电流-电压(I-V)曲线的两探针装置.测量得到基本线性、典型整流型、基本对称和非对称的I-V曲线.采用金属-半导体-金属(M-S-M)模型和热电子发射理论分析了I-V曲线的特征.ZnO纳米线的导通电流主要取决于纳米线与2个钨电极的M-S-M结的接触程度.ZnO纳米线电学性能的计算表明,由基本线性I-V特征计算的电阻率为4.2Ω.cm;整流型I-V特性曲线的有效势垒高度为0.47 eV.
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| 关 键 词： | 氧化锌纳米线 I-V特性 欧姆接触 肖特基势垒 |
Electrical Characterization of ZnO Nanowires Contacted to Tungsten Electrodes |
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| JI Yuan,WEI Bin,WANG Li,ZHANG Yin-qi,XIE Xue-song,L Chang-zhi,ZHANG Yue-fei.Electrical Characterization of ZnO Nanowires Contacted to Tungsten Electrodes[J].Journal of Beijing Polytechnic University,2009,35(9):1235-1240. |
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| Authors: | JI Yuan WEI Bin WANG Li ZHANG Yin-qi XIE Xue-song L Chang-zhi ZHANG Yue-fei |
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| Affiliation: | JI Yuan,WEI Bin,WANG Li,ZHANG Yin-qi,XIE Xue-song,L(U) Chang-zhi,ZHANG Yue-fei |
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| Abstract: | To study the electrical properties of single nanowire and device based on nanowire,a two-probe configuration setup was built for measuring current-voltage(I-V) curves of individual ZnO nanowire with a micromanipulator system in a scanning electron microscope.The I-V curves of ZnO nanowires,i.e.,almost linear,typical rectifying,almost symmetric and asymmetric were obtained.I-V characteristics are explained by a metal-semiconductor-metal(M-S-M) model and the thermionic emission theory.The current of ZnO nanowires mainly depends on the degree of coupling between the nanowire and two contact tungsten electrodes.The calculation results of electrical properties for ZnO nanowires shows that the resistance of almost linear curve is 4.2 Ω·cm;the effective Schottky barrier height of rectifying I-V characteristics is 0.47 eV. |
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| Keywords: | ZnO nanowire I-V characteristics ohmic contact schottky barrier |
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