Hardness, internal stress and fracture toughness of epitaxial AlxGa1−xAs films

Vickers microhardness indentations of 10 μm (001) oriented epilayers of Al_xGa_1?xAs on GaAs substrates have been utilized to evaluate the hardness H_v, the internal stress, and the fracture toughness K_Ic of the layers as a function of their composition parameter x. The hardness H_v varies linearly according to: (6.9-2.2x) GPa and K_Ic increases linearly with x according to: K_1c = (0.44+1.30x) MPa m^1/2. The influence of the substrate on these measurements was found to be negligible for the layer thickness (10 μm) and the indentation load (0.25 N) used, disregarding internal stresses.

Internal film stresses were evaluated by the bimorph buckling method, and were found to depend on the composition parameter according to σ = 0.13x GPa. These stresses did not notably affect the H_v measurements, but for K_Ic corrections as large as 25% had to be made.

The radial cracks observed were of the shallow Palmqvist type. In contradiction to previous reports on this type of cracking, it was found to initiate during unloading, not during loading, and a physical explanation for this deviation is given. No deep radial/median cracks were observed. It was found important to use expressions based on the correct crack geometry in the K_Ic evaluation. Also, a simple theory for the influence of internal stresses on the K_Ic results has been developed.