| 三源真空共蒸发沉积 CuInSe_2薄膜 |
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| 引用本文： | 魏晋云,廖华,王东城. 三源真空共蒸发沉积 CuInSe_2薄膜[J]. 材料研究学报, 1991, 5(6): 472-476 |
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| 作者姓名： | 魏晋云 廖华 王东城 |
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| 作者单位： | 云南师范大学太阳能研究所(魏晋云)，云南师范大学(廖华)，云南师范大学(王东城) |
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| 基金项目： | 国家自然科学基金,5880101 |
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| 摘 要： | 用三源真空共蒸发沉积 CuInSe_2。调节三源的配方及蒸发速率,控制薄膜的组分,获得了具有单相黄铜矿结构的多晶 CuInSe_2薄膜。发现适当的热处理对薄膜的成相是必需的。研究了薄膜组分、结构、光学和电学性质与工艺条件的关系。
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| 关 键 词： | 太阳电池 CuInSe_2薄膜 真空蒸发 |
| 收稿时间： | 1991-12-25 |
| 修稿时间： | 1991-12-25 |
VACUUM Co-EVAPORATED DEPOSITION FOR CuInSe_2 THIN FILM BY THREE-SOURCES PROCESS |
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| WEI Jinyun LIAO Hua WANG Dongcheng. VACUUM Co-EVAPORATED DEPOSITION FOR CuInSe_2 THIN FILM BY THREE-SOURCES PROCESS[J]. Chinese Journal of Materials Research, 1991, 5(6): 472-476 |
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| Authors: | WEI Jinyun LIAO Hua WANG Dongcheng |
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| Affiliation: | Yunnan Normal University |
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| Abstract: | Thin films of CuInSe_2 have been co-evaporated in vacuum bythree-sources process.The compositions of the films have been controlled by ratio of theelements in the three sources and temperature of the three sources.Satisfactary compositionand single chalcopyrite structure have been obtained.It has been found that treatment isnecessary for forming single chalcopyrite phase.The composition,structure,optical andelectrical properties of evaporated CuInSe_2 thin films have been disscussed in relation topreparation conditions. |
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| Keywords: | solar cell CuInSe_2 film vacuum evaporation |
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