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Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots |
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| Authors: | I L Krestnikov A V Sakharov W V Lundin Yu G Musikhin A P Kartashova A S Usikov A F Tsatsul’nikov N N Ledentsov Zh I Alferov I P Soshnikov E Hahn B Neubauer A Rosenauer D Litvinov D Gerthsen A C Plaut A A Hoffmann D Bimberg |
| Affiliation: | 1. Ioffe Physicotechnical Institute, St. Petersburg, 194021, Russia 2. Laboratorium für Electronenmikroskopie der Universit?t Karlsruhe, Postfach 6980, D-76128, Karlsruhe, Germany 3. Exeter University, Stocker Road, Exeter, EX44QL, UK 4. Institut für Festk?rperphysik, Technische Universit?t Berlin, D-10623, Berlin, Germany |
| Abstract: | InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (～ 105 cm?1) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm2. |
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