Low-threshold, highly reliable 630 nm-band AlGaIP visible laserdiodes with AlInP buried waveguide |
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| Authors: | Kobayashi R. Hotta H. Miyasaka F. Hara K. Kobayashi K. |
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| Affiliation: | Opto-Electron. Res. Labs., NEC Corp., Tsukuba; |
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| Abstract: | Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have been developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current of 19 mA at 25°C is obtained with a cavity length of 310 μm. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 μm operated over 7000 h without significant degradation at 60°C and 5 mW |
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