Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge |
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Authors: | G. Agostinelli A. Delabie P. Vitanov Z. Alexieva H.F.W. Dekkers S. De Wolf G. Beaucarne |
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Affiliation: | aIMEC vzw, Kapeldreef 75, Leuven, Belgium;bCL SENES, Sofia, Bulgaria |
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Abstract: | Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al2O3 layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al2O3 are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers. |
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Keywords: | Surface passivation Al2O3 Negative charges |
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