Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry |
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Authors: | S Dakshinamurthy I Bhat |
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Affiliation: | (1) ECSE Department, Rensselaer Polytechnic Institute, 12180-3590 Troy, NY |
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Abstract: | Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and
well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The
susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process
variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during
the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window.
We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed
decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor
temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of
the adsorbed DIPTe species on the Cd terminated surface. |
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Keywords: | Atomic layer epitaxy (ALE) CdTe in-situ monitoring spectroscopic ellipsometry (SE) |
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