| TiSi_2/N~+-poly Si/SiO_2/Si MOS结构的电学特性 |
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| 引用本文： | 刘平,张爱呜. TiSi_2/N~+-poly Si/SiO_2/Si MOS结构的电学特性[J]. 固体电子学研究与进展, 1988, 0(4) |
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| 作者姓名： | 刘平 张爱呜 |
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| 作者单位： | 复旦大学电子工程系(刘平)，复旦大学电子工程系(张爱呜) |
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| 摘 要： | <正> 一、 引言 随着半导体器件向微小型化发展,电路的速度与栅极和互连材料密切相关。目前应用较广的多晶硅栅技术具有自对准形成源漏区、低阈值电压、高温热稳定性好等优点。但多晶硅的电阻率较高,严重影响了电路速度的提高。在多晶硅上生长一层具有高电导率的TiSi_2薄膜取代多晶硅作为栅电极,可以有效地克服多晶硅电阻率高的缺点,提高电路速度。 本实验采用NH_3等离子体增强热退火,使Ti/poly Si固相反应形成TiSi_2,同时表面形成一层很薄的TiN。TiN被证明是一层良好的扩散阻挡层。通过对TiN/TiSi_2复合薄膜的薄层电阻测试和MOS高频C—V测试,证明这种方法是可行的。
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Electrical Characteristics of the TiSi_2 /N~+-poly-Si/Si0_2 /Si MOS Structure |
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| Abstract: | The self-aligned TiSi2/N+ poly-Si/SiO2/Si composite gate MOS structure was fqrmed by NH3 plasma assisted thermal annealing of a Ti film deposited on the N+ poly-Si/SiO2 /Si substrate. The sheet resistances of the samples were measured by the four-point probe and the MOS interface properties were investigated with high frequency C-V curves. The results show that the TiSi2/poly-Si(Ti-polycide) gate not only takes the advantage of TiSi2 thin film's high conductivity but also retains the good poly-Si/SiO2 interface. |
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