| 常压CVD淀积非晶硅薄膜的研究 |
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| 引用本文： | 王永兴,崔万秋,何笑明,王敬义.常压CVD淀积非晶硅薄膜的研究[J].武汉理工大学学报,1991(3). |
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| 作者姓名： | 王永兴 崔万秋 何笑明 王敬义 |
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| 作者单位： | 武汉工业大学材料科学系，武汉工业大学材料科学系，华中理工大学，华中理工大学 |
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| 摘 要： | 本文应用常压CVD法制备出了α-Si薄膜,它是非晶硅太阳能电池的良好材料。采用X射线衍射、扫描电镜、红外透射谱和X射线光电子能谱对α-Si薄膜的结构和性能进行了研究,并给出了α-Si薄膜的淀积理论模型。
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| 关 键 词： | 常压CVD 非晶硅薄膜 淀积理论模型 |
The Studies on the Amorphous Silicon Thin Films Deposited by CVD at Atmosphere Pressure |
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| Wang Yongxing,Cui Wangqiu,He Xiaomin,Wang Jinyi.The Studies on the Amorphous Silicon Thin Films Deposited by CVD at Atmosphere Pressure[J].Journal of Wuhan University of Technology,1991(3). |
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| Authors: | Wang Yongxing Cui Wangqiu He Xiaomin Wang Jinyi |
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| Affiliation: | Wang Yongxing;Cui Wangqiu;He Xiaomin;Wang Jinyi |
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| Abstract: | The a-si thin film deposited by CVD at atmosphere pressure is reported. It is the good material which a-si solar cell is made from. The Structure and properties of a-si thin film are analysed by XRD,SEM,IR spectrum and XPS spectrum. The theoretical model on a- si thin film deposition is shown. |
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| Keywords: | APCVD A-st thin film The theoretical model on deposition |
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