Trap-assisted tunneling in p-Si/SiO2 structures

Conduction in p-Si/SiO₂ structures in which a 65.3-nm SiO₂ layer has been subjected to hydrogen-plasma treatment at 20 °C does not depend on temperature in the range 77–300 K, in the accumulation regime under an electric field of 0.7–4.5×10⁶ V cm^?1 in the SiO₂ layer. A trap-assisted tunneling mechanism in the SiO₂ layer has been proposed as an explanation for this tunneling-type conduction in the p-Si/SiO₂ structures.