| 宽带隙ZnMgO的电学特性及其透明薄膜场效应晶体管 |
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| 引用本文： | 吴惠桢,梁军,劳燕锋,余萍,徐天宁,邱东江.宽带隙ZnMgO的电学特性及其透明薄膜场效应晶体管[J].半导体学报,2006,27(13):218-222. |
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| 作者姓名： | 吴惠桢 梁军 劳燕锋 余萍 徐天宁 邱东江 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;浙江大学物理系，杭州 310027;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;浙江大学物理系，杭州 310027;浙江大学物理系，杭州 310027;浙江大学物理系，杭州 310027 |
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| 摘 要： | 首次提出了用六方相晶体结构的宽带隙ZnMgO作为薄膜场效应晶体管（TFT）的沟道层，用立方相ZnMgO纳米晶体薄膜作为栅绝缘层，在实验中用透明的ITO导电玻璃作为衬底，通过连续沉积六方和立方相结构的纳米ZnMgO晶体薄膜，并通过光刻、电极工艺等，研制了透明的ZnO基TFT, TFT的电流开关比达到1E4，场效应迁移率为0.6cm2/(V·s).在偏压2.5MV/cm下漏电流为1E-8A.
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| 关 键 词： | 立方相和六方相ZnMgO 薄膜场效应晶体管 电学特性 |
Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors |
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| Wu Huizhen,Liang Jun,Lao Yanfeng,Yu Ping,Xu Tianning and Qiu Dongjiang.Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J].Chinese Journal of Semiconductors,2006,27(13):218-222. |
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| Authors: | Wu Huizhen Liang Jun Lao Yanfeng Yu Ping Xu Tianning and Qiu Dongjiang |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics,Shanhai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China;Department of Physics,Zhejiang University,Hangzhou 310028,China;State Key Laboratory of Functional Materials for Informatics,Shanhai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanhai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China;Department of Physics,Zhejiang University,Hangzhou 310028,China;Department of Physics,Zhejiang University,Hangzhou 310028,China;Department of Physics,Zhejiang University,Hangzhou 310028,China |
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| Abstract: | We propose to use Hexagonal phase Zn1-xMgxO as active channel layer and cubic phase Zn1-xMgxO as gate dielectric of transparent thin film transistors(TFTs).The consistent Zn1-xMgxO thin films are sequentially deposited on ITO substrates and monolithigraph and electrical contact are made.The TFTs have demonstrated an on/off ratio of 1E4 and a channel mobility on the order of 0.6cm2/(V·s).Leakage current is as low as 4.0E-8A at 2.5MV/cm electrical field. |
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| Keywords: | cubic- and hexagonal- phase ZnMgO thin film transistor electrical properties |
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