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HBT自热效应对功率放大器偏置电路的影响及补偿
引用本文:陈延湖,申华军,王显泰,葛霁,刘新宇,吴德馨.HBT自热效应对功率放大器偏置电路的影响及补偿[J].电子器件,2007,30(3):829-832.
作者姓名:陈延湖  申华军  王显泰  葛霁  刘新宇  吴德馨
作者单位:中国科学院微电子研究所,北京,100029
摘    要:研究了GaAs HBT的自热效应对功率放大器镜像电流源偏置电路性能的影响.HBT自热效应使得这种偏置电路的镜像精度和温度特性变差.利用HBT器件特有的集电极电流热电负反馈理论,通过优化基极偏置电阻的方法,对自热效应进行了有效补偿,偏置电路的电流镜像精度得到有效提高,偏置电流温度漂移由9.5%减小到0.5%.

关 键 词:自热效应  HBT  镜像电流源偏置电路  功率放大器
文章编号:1005-9490(2007)03-0829-04
修稿时间:2006-05-29

Effect of HBT Self-Heating Effect on Bias Circuit for Power Amplifier and Its Compensation
CHEN Yan-hu,SHEN Ha-jun,WANG Xian-tai,GE Ji,LIU Xin-yu,WU De-xin.Effect of HBT Self-Heating Effect on Bias Circuit for Power Amplifier and Its Compensation[J].Journal of Electron Devices,2007,30(3):829-832.
Authors:CHEN Yan-hu  SHEN Ha-jun  WANG Xian-tai  GE Ji  LIU Xin-yu  WU De-xin
Affiliation:Institute of Microelectronics, The Chinese Academy of Sciences, Beijing 100029, China
Abstract:The effect of GaAs hbt Self-Heating effect on current mirror bias circuit for power amplifier was studied. The effect of self-heating degraded the mirror accuracy and the temperature characteristic of the bias circuit. According to the novel electrical-thermal negative feedback of hbt, a simple method of optimizing a base bias resistor was used to compensate the self-heating in this bias circuit. The results showed that the mirror accuracy was improved and the variation of the bias current as temperature was reduced from 9.5 % to 0. 5 %.
Keywords:self-heating effect  heterojunction bipolar transistor(HBT)  current mirror bias circuit  power amplifier
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