High-speed InGaAsP/InP multiple-quantum-well laser |
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| Authors: | Lipsanen H. Coblentz D.L. Logan R.A. Yadvish R.D. Morton P.A. Temkin H. |
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| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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| Abstract: | The authors describe practical high-speed InGaAsP/InP lasers based on compressively strained quantum wells. Buried heterostructure lasers with threshold currents of 10 mA and slope efficiencies of 0.23 mW/mA are used. A modulation bandwidth of 20 GHz is obtained at a low drive current of 90 mA. A K factor of 0.25 ns is obtained and the intrinsic bandwidth of these lasers is estimated at 35 GHz |
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