Influence of photon reabsorption on the transfer efficiency of output intensity in semiconductor microcavities |
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Authors: | T. Nishikawa M. Yokota S. Nakamura Y. Kadoya M. Yamanishi I. Ogura |
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Affiliation: | Dept. of Phys. Electron., Hiroshima Univ., Japan; |
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Abstract: | Photon reabsorption effect on the transfer efficiency /spl beta//sub t/ of half-wavelength semiconductor microcavities was investigated by examining the excitation intensity dependence of the output light intensity. It is shown that /spl beta//sub t/ increases under intense excitation, and approaches to over-all spontaneous emission coupling coefficient /spl beta//sub 0/, as a result of the elimination of photon reabsorption. The results clearly demonstrate that the photon reabsorption is the predominant mechanism of the suppression of /spl beta//sub t/ at weak excitation, especially in the case of half-wavelength high-Q cavities. |
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