| CMOS图像传感器中电荷非完全转移的影响分析 |
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| 引用本文： | 韩立镪,姚素英,徐江涛,徐超,高志远. CMOS图像传感器中电荷非完全转移的影响分析[J]. 半导体学报, 2013, 34(5): 054009-6 |
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| 作者姓名： | 韩立镪 姚素英 徐江涛 徐超 高志远 |
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| 作者单位： | School of Electronic Information Engineering,Tianjin University |
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| 摘 要： | A method to judge complete charger transfer is proposed for a four-transistor CMOS image sensor with a large pixel size.Based on the emission current theory,a qualitative photoresponse model is established to the preliminary prediction.Further analysis of noise for incomplete charge transfer predicts the noise variation.The test pixels were fabricated in a specialized 0.18μm CMOS image sensor process and two different processes of buried N layer implantation are compared.The trend prediction corresponds with the test results,especially as it can distinguish an unobvious incomplete charge transfer.The method helps us judge whether the charge transfer time satisfies the requirements of the readout circuit for the given process especially for pixels of a large size.
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| 关 键 词： | CMOS image sensor charge transfer pinned photodiode nonlinearity shot noise |
| 收稿时间： | 2012-07-29 |
| 修稿时间： | 2012-09-28 |
Analysis of incomplete charge transfer effects in a CMOS image sensor |
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| Han Liqiang,Yao Suying,Xu Jiangtao,Xu Chao and Gao Zhiyuan. Analysis of incomplete charge transfer effects in a CMOS image sensor[J]. Chinese Journal of Semiconductors, 2013, 34(5): 054009-6 |
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| Authors: | Han Liqiang Yao Suying Xu Jiangtao Xu Chao Gao Zhiyuan |
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| Affiliation: | School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | |
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| Keywords: | CMOS image sensor charge transfer pinned photodiode nonlinearity shot noise |
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