Double heterojunction bipolar transistor in Al/sub x/Ga/sub 1-x/As/GaAs/sub 1-y/Sb/sub y/ system |
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| Authors: | Ikossi-Anastasiou K Ezis A Evans KR Stutz CE |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA; |
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| Abstract: | Double heterojunction bipolar transistors based on the Al/sub x/Ga/sub 1-x/As/GaAs/sub 1-y/Sb/sub y/ system are examined. The base layer consists of narrow band gap GaAs/sub 1-y/Sb/sub y/ and the emitter and collector consist of wider band gap Al/sub x/Ga/sub 1-x/As. Preliminary experimental results show that AlGaAs/GaAsSb/GaAs DHBTs exhibit a current gain of five and a maximum collector current density of 5*10/sup 4/ A/cm/sup 2/.<> |
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