Spin injection and transport in organic spin-valves based on fullerene C60 |
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| Affiliation: | 1. Key Laboratory of Photonics Technology for information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, PR China;2. Polymer and Color Chemistry Program, Textile Engineering, North Carolina State University, NC 27695, USA;1. Center for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;2. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;1. Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, PR China;2. Department of Chemistry, Renmin University of China, Beijing 100872, PR China;1. Department of Electronics Engineering, Dong-A University, South Korea;2. Kolon Glotech, INC., South Korea;1. Aix Marseille Université, CNRS, IM2NP UMR 7334, 13397 Marseille, France;2. Université de Pau et des Pays de l’Adour, CNRS, IPREM UMR 5254, 64000 Pau, France;3. Aix Marseille Université, CNRS, CINAM, UMR 7325, Campus de Luminy, 13288 Marseille, France |
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| Abstract: | We report the fabrication and magnetoresistance (MR) of the La0.67Sr0.33MnO3/C60/Co spin valves. The introduction of 1.5 nm AlOx barrier between the C60 layer and cobalt top electrode prevents effectively interfacial diffusion and Co penetration, and thus an appreciable positive MR (as large as 3.65%) at room temperature was exhibited for the devices in the thickness range (5–40 nm) of C60 studied. Possible mechanisms on the MR polarity are proposed. Furthermore, based on the temperature- and thickness- dependent MR and I–V characteristics, we have obtained clear evidences that the MR of C60-based spin-valves originates from the tunneling of spin-polarized electrons at the low thickness of C60, however at the larger thickness (>20 nm) the electrons are injected into and subsequently hopping transport within the C60 spacer. |
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| Keywords: | Spintronics Organic semiconductor Magnetoresistance Spin transport Fullerene |
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