Carboxylic acid mediated self-assembly of small molecules for organic thin film transistors |
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| Affiliation: | 1. School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, Nanyang Avenue, Singapore 639798, Singapore;2. Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A1STAR), 3 Research Link, Singapore 117602, Singapore;1. Energy Research Institute at NTU, Research Technoplaza, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore;2. Faculty of Engineering Physics and Nanotechnology, University of Engineering and Technology, Vietnam National University, 144 Xuan Thuy, Hanoi, Vietnam;3. School of Materials Science and Engineering, Nanyang Technological University, Block 4.1, 50 Nanyang Avenue, Singapore 639798, Singapore;1. Department of Electronic Engineering, University of Rome “Tor Vergata”, 00133 Rome, Italy;2. Technische Universität München, Electrical Engineering and Information Tech., Arcisstr. 21, 80333 München, Germany;1. Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210046 Nanjing, PR China;2. Institute of Advanced Materials (IAM), Nanjing University of Technology, 211816 Nanjing, PR China;1. Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, PR China;2. Department of Chemistry, Renmin University of China, Beijing 100872, PR China |
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| Abstract: | A p-type small molecule bearing dicarboxylic acid functional group (–COOH) is synthesized and evaluated for field-effect transistor properties. We discover and report for the first time, that the –COOH groups assist in the passivation of surface traps on the dielectric layer and simultaneously facilitate the self-assembly of the molecules via inter-molecular hydrogen bonding resulting in crystalline active channels. A 9-fold decrease in the threshold voltage was observed for the transistors made using the –COOH functionalized molecule, QT-DA, compared to its ester analogue, QT-ES, providing an evidence of surface passivation. This resulted in an increase in the hole mobility of QT-DA by up to 2 orders of magnitude. It was shown that QT-DA adopts a vertical alignment with respect to the substrate due to preferential interaction between the –COOH groups and the SiO2 surfaces. |
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| Keywords: | Self-assembly Hydrogen-bonding Small molecule Organic field-effect transistor Spin coat |
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