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Topography engineering of ferroelectric crystalline copolymer film
Affiliation:1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju 500-712, Republic of Korea;2. Graduate School of Analytical Science and Technology, Chungnam National University, 79 Daehakro, Yuseong-Gu, Daejeon 305-764, Republic of Korea;3. Institute of Materials Research and Engineering, A1STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore;1. Department of Materials and Engineering, Nanchang Hangkong University, Nanchang 330063, China;2. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;3. Department of Information Engineering, Nanchang Hangkong University, Nanchang 330063, China;1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;2. Faculty of Chemistry, Northeast Normal University, Changchun 130024, China;1. Department Materials Science and Engineering, Stanford University, Stanford, CA 94305-4034, USA;2. High Temperature Materials Unit, National Institute for Materials Science, Ibaraki 305-0047, Japan
Abstract:Effects of surface roughness as well as crystallinity onto functionalities of crystalline copolymer films were studied using a dipping method to inject the crystalline grains into voids among crystalline nano-rods. Differently from a widely-used fabrication method such as spin-coating of solution, we achieved a smooth surface and high crystallinity in ferroelectric P(VDF-TrFE) films, simultaneously. Varying dipping temperature and time, remnant polarization and relative dielectric constant values increased by 20% and 75% with a decrease of surface roughness from 20 nm to 7 nm in root mean square value, respectively. The ferroelectric stabilities of P(VDF-TrFE) film capacitors were found to be strongly dependent on the crystallinity.
Keywords:Organic  Ferroelectric film  Topographies  Void
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