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Improved electron injection from silver electrode for all solution-processed polymer light-emitting diodes with Cs2CO3:conjugated polyelectrolyte blended interfacial layer
Affiliation:1. Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan;2. Research Institute for Ubiquitous Energy Devices, Kansai Center, National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan;1. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA;2. CHD-Fab, Freescale Semiconductor Inc., Tempe, AZ 85224, USA;1. School of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea;2. Department of Electronic Engineering, Dong-A University, Busan 604-714, Republic of Korea;3. OLED Research Center, Components & Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea
Abstract:This study demonstrates the incorporation of a Cs2CO3:conjugated polyelectrolyte blended interfacial layer between the emissive layer and a silver (Ag) cathode, for realizing all-solution processed polymer light-emitting diodes. For a device with poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) as the emissive layer, this approach improves the maximum luminance of approximately 80,000 cd/m2 and maximum current efficiency of 10.6 cd/A. It is clarified that the interfacial layer prevents Ag nanoparticles from penetrating into the emissive layer, resulting in yellow–green emission from F8BT. We also demonstrate the possibility of all-solution processed polymer light-emitting diodes utilizing solution-processed Cs2CO3:conjugated polyelectrolyte interfacial layer and Ag nano-ink.
Keywords:Polymer light-emitting diodes  Conjugated polyelectrolyte  Ag nano-ink  Interfacial layer
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