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Influence of source/drain electrodes on external quantum efficiency of ambipolar organic light-emitting transistors
Affiliation:1. Department of Chemistry, College of Science, Shantou University, Shantou, Guangdong 515063, PR China;2. Institute of New Energy Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Science (CAS), Ningbo, Zhejiang 315201, PR China;1. Department of Photonics, National Sun Yat-sen University, Kaohsiung 804, Taiwan;2. Department of Chemical Engineering and Materials Science, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan;1. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;2. Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, UK;3. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA, USA;4. Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK;1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;2. Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany;3. School of Physics, Shandong University, Jinan 250100, China;1. College of Physics and Electronic Engineering, Taishan University, Tai’an, Shandong 271021, PR China;2. Department of Physics, School of Science, East China University of Science & Technology, Shanghai 200237, PR China;3. Nano-Organic Photoelectronic Laboratory and Key Laboratory of Photochemical Conversion & Optoelectronic Materials, Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;4. Department of Chemistry and Chemical Engineering, Taishan University, Tai’an, Shandong 271021, PR China
Abstract:The influence of source/drain (S/D) electrodes on the external quantum efficiency (EQE) of ambipolar organic light-emitting transistors (OLETs) based on fluorene-type polymer films is investigated. The electrical properties and the maximum EQE value of the device with indium tin oxide (ITO) S/D electrodes are almost the same as those of the device with Ag S/D electrodes. A relatively high EQE of 1% is achieved regardless of the emission site for the OLET with ITO. In contrast, the EQE of the OLET with Ag is low when the emission occurs close to the S/D electrodes. The maximum EQE of the device with Ag is obtained when the emission is observed in the middle of the channel. It is found that the exciton quenching by Ag electrodes significantly influences the low EQE of the OLET with Ag electrodes. The achievement of high EQE regardless of the emission site is attributable to both better carrier injection and lower exciton quenching at the interface of S/D electrodes for the OLET with ITO.
Keywords:Ambipolar organic light-emitting transistor  Polyfluorene  Top-gate  Light-emitting device  External quantum efficiency
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