Flexible and transparent nanocrystal floating gate memory devices using silk protein |
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| Affiliation: | 1. Department of Physics & Meteorology, Indian Institute of Technology, Kharagpur 721301, India;2. Department of Physics, National Institute of Technology, Agartala 799055, India;3. Department of Biotechnology, Indian Institute of Technology, Kharagpur 721302, India;1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea;2. Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, ROC;1. Dipartimento di Scienze Fisiche e Chimiche, Università dell’Aquila, Via Vetoio 10, 67100 L’Aquila, Italy;2. Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, Viale Politecnico I, 00133 Roma, Italy;3. Istituto Superiore delle Comunicazioni e delle Tecnologie dell''Informazione, Ministero dello Sviluppo Economico, Viale America 201, 00144 Roma, Italy;4. CNR-SPIN L’Aquila, Via Vetoio 10, 67100 L’Aquila, Italy;1. Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China;2. School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;1. R&D Center for Science and Engineering, JEC Group of Colleges, Jaipur Engineering College Campus, Kukas, Jaipur 303101, Rajasthan, India;2. Department of Physics, JNV University, Jodhpur, India;3. Defence Laboratory, Jodhpur 342011, India;4. Department of Chemistry, Indian Institute of Technology, Indore 452017, MP, India;1. Institute for Pharmacy and Food Chemistry, University of Wuerzburg, Am Hubland, 97074 Wuerzburg, Germany;2. Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, 400030 Chongqing, PR China |
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| Abstract: | The charge storage behavior of a floating gate memory device using carbon nanotube-CdS nanostructures embedded in Bombyx mori silk protein matrix has been demonstrated. The capacitance – voltage characteristics in ITO/CNT–CdS-silk composite/Al device exhibits a clockwise hysteresis behavior due to the injection and storage of holes in the quantized valence band energy levels of CdS nanocrystals. The enhanced charge injection resulting in increase in memory window is observed at higher sweeping voltages. Nearly frequency independent hysteresis width over a wide range of 100 kHz–2.0 MHz, indicates its origin due to the charge storage in nanocrystals. The memory behavior of carbon nanotube–CdS nanostructures/silk nanocomposite devices has also been demonstrated on polyethylene terephthalate substrates, which may provide the way for flexible, transparent and printable electronic devices. |
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| Keywords: | Flexible Transparent Nanocrystal Floating gate memory Silk protein |
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