Improving solution-processed n-type organic field-effect transistors by transfer-printed metal/semiconductor and semiconductor/semiconductor heterojunctions |
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| Affiliation: | 1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea;2. Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom;3. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany;4. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan;1. Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan;2. International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan;1. School of Chemical Engineering and Material Science, Chung-Ang University, Seoul 156-756, Republic of Korea;2. School of Materials Science & Engineering and Engineering Research Institute (ERI), Gyeongsang National University, Jinju 660-701, Republic of Korea;3. Department of Chemistry and ERI, Gyeongsang National University, Jinju 660-701, Republic of Korea;1. R&D Center for Science and Engineering, JEC Group of Colleges, Jaipur Engineering College Campus, Kukas, Jaipur 303101, Rajasthan, India;2. Department of Physics, JNV University, Jodhpur, India;3. Defence Laboratory, Jodhpur 342011, India;4. Department of Chemistry, Indian Institute of Technology, Indore 452017, MP, India;1. Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road E1 4NS, London, United Kingdom;2. College of Physical Science and Technology, Sichuan University, Chengdu 610064, China |
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| Abstract: | Solution-processed n-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing. Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6 V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0 × 10−3 and 2.8 × 10−3 cm2 V−1 s−1) even in a coplanar structure with symmetric Au electrodes. The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs. |
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| Keywords: | Organic field-effect transistors Transfer printing Heterojunctions Conjugated polymers |
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