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Dialkylated dibenzotetrathienoacene derivative as semiconductor for organic field effect transistors
Affiliation:1. Key Laboratory of Organosilicon Chemistry and Material Technology of Ministry of Education, Hangzhou Normal University, Hangzhou 310012, PR China;2. Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;3. Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai 200032, PR China;1. Department of Physics, Virginia Commonwealth University, Richmond, VA 23284, United States;2. H.E.J. Research Institute of Chemistry, University of Karachi, Karachi 75270, Pakistan;3. Department of Surgery, Virginia Commonwealth University, School of Medicine, Richmond, VA 23298, United States;4. National Institute of Standards and Technology, Materials Measurement Science Division, Gaithersburg, MD 20899-8520, United States;1. Carbon Convergence Materials Research Center, Korea Institute of Science and Technology, San 101, Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do 565-905, Republic of Korea;2. Department of Nano-Material Engineering, University of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Republic of Korea;3. Soft Innovative Materials Research Center, Korea Institute of Science and Technology, San 101, Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do 565-905, Republic of Korea;1. Department of Chemistry, College of Science, Shantou University, Shantou, Guangdong 515063, PR China;2. Institute of New Energy Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Science (CAS), Ningbo, Zhejiang 315201, PR China;1. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;2. Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, UK;3. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA, USA;4. Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK;1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;2. Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany;3. School of Physics, Shandong University, Jinan 250100, China
Abstract:A novel semiconductor material based on dialkylated thienoacene is designed and synthesized. The dihexyl-substituted dibenzotetrathienoacene derivative C6-DBTTA exhibits high stability which is evidenced by thermogravimetric analysis (TGA), UV–vis spectroscopy and electrochemistry. X-ray diffraction measurements of the vacuum-evaporated thin films show strong diffraction and indicate that the molecules are stacked nearly perpendicular to the substrate. AFM images reveal that the morphology of thin films depended on the deposition temperature. Thin film FETs devices based on C6-DBTTA were constructed and showed high mobility up to 0.48 cm2 V?1 s?1 and an on/off ratio over 107. These results suggest that this new dihexylated thienoacene is an important organic semiconductor for field effect transistors.
Keywords:Organic field-effect transistors  Dibenzotetrathienoacene derivative  Thienoacene  Mobility  Stability  Organic semiconductors
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