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Planar organic spin valves using nanostructured Ni80Fe20 magnetic contacts
Affiliation:1. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;2. Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, UK;3. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA, USA;4. Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK;1. Department of Chemistry, College of Science, Shantou University, Shantou, Guangdong 515063, PR China;2. Institute of New Energy Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Science (CAS), Ningbo, Zhejiang 315201, PR China;1. Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, UK;2. School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS, UK;3. Electronic & Electrical Engineering, University College London, London WC1E 7JE, UK;4. Cardiff Catalysis Institute, School of Chemistry, Cardiff University, Cardiff CF10 3AT, UK;1. Department of Photonics, National Sun Yat-sen University, Kaohsiung 804, Taiwan;2. Department of Chemical Engineering and Materials Science, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan;1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;2. Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany;3. School of Physics, Shandong University, Jinan 250100, China;1. Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002, People’s Republic of China;2. Department of Applied Physics, Hunan University, Changsha 410082, People’s Republic of China
Abstract:Planar organic spin valves were fabricated by evaporating organic semiconductor PTCDI-C13 onto pairs of patterned Ni80Fe20 magnetic nanowires separated by 120 nm. Control over the relative alignment of magnetisation in the nanowires was achieved by including a domain wall ‘nucleation pad’ at the end of one of the wires to ensure a large separation in magnetic switching fields. Switching behaviour was investigated by optical and X-ray magnetic imaging. Room temperature organic magnetoresistance of ?0.35% was observed, which is large compared to that achieved in vertical spin valves with similar materials. We attribute the enhanced performance of the planar geometry to the deposition of the semiconductor on top of the metal, which improves the quality of metal–semiconductor interfaces compared to the metal-on-semiconductor interfaces in vertical spin valves.
Keywords:Organic spintronics  Organic spin valves  Planar spin valve  Spin transport  In-plane spin valve  Organic semiconductors
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