The effect of oxygen content on the performance of low-voltage organic phototransistor memory |
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| Affiliation: | 1. Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing 100084, PR China;2. Department of Chemistry, Renmin University of China, Beijing 100872, PR China;1. Department of Chemistry, Research Institute for Natural Sciences, Korea University, 5 Anam-dong, Sungbuk-gu, Seoul 136-701, Republic of Korea;2. Future Convergence Research Division, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Republic of Korea;3. Display and Nanosystem Laboratory, College of Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-713, Republic of Korea;1. Key Laboratory of Photonics Technology for information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, PR China;2. Polymer and Color Chemistry Program, Textile Engineering, North Carolina State University, NC 27695, USA;1. Department of Chemistry Education, Graduate Department of Chemical Materials, BK 21 PLUSTeam for Advanced Chemical Materials, Institute for Plastic Information and Energy Materials, Pusan National University, Busan 609-735, Republic of Korea;2. Department of Materials Science and Engineering and the Center for Organic Light Emitting Diode, Seoul National University, Seoul 151-744, Republic of Korea;1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, United States;2. Plextronics Inc., Pittsburgh, PA 15238, United States;1. Center for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;2. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;1. Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, United States;2. Department of Chemistry, University of Kentucky, Lexington, KY 40506-0055, United States |
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| Abstract: | Optical writing and electrical erasing organic phototransistor memory (OPTM) is a promising photoelectric device for its novel integration of photosensitive and memory properties. The performance of OPTM can be influenced by the trap density of the gate dielectric layer. Here, we occupy tantalum pentoxide (Ta2O5), which is a prospective material in microelectronics field, as the gate dielectric. By increasing the oxygen content from 10% to 50% during the fabrication process of Ta2O5, it is found that the mobility and the photoresponsivity of OPTMs are significantly enhanced about 10 times and the retention time is greatly increased to 8.4 × 104 s as well. As far as we know, this is the first example that the modulation of oxygen content can improve the OPTM performance. Furthermore, the change of the oxygen content gives rise to the alteration of the threshold voltage and memory window, of which the absolute values of all the threshold voltage are below 5 V which is low enough to reduce the power consumption. It is found that the oxygen content can influence the surface roughness and surface energy of Ta2O5 films, which alter the nucleation and orientation of semiconductor layers, change the contact resistance and modulate the electron trap density in the Ta2O5 films. |
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| Keywords: | Organic phototransistor memory Oxygen content Photoresponsivity Retention time |
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