High performance tetrathienoacene-DDP based polymer thin-film transistors using a photo-patternable epoxy gate insulating layer |
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| Affiliation: | 2. Department of Mechanical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, South Korea;1. Science and Technology Division, Corning Incorporated, Corning, NY 14831, USA;2. Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA |
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| Abstract: | High performance organic thin-film transistors (OTFTs) are fabricated on an epoxy based photo-patternable organic gate insulating layer (p-OGI) using a top contact thin-film transistor configuration. This negative tone p-OGI material is composed of an epoxy type polymer resin, a polymeric epoxy cross-linker, and a sulfonium photoacid generator (PAG). Features from p-OGI can be precisely patterned down to ∼3 μm via i-line photolithography. In order to evaluate the potential of this epoxy type resin as a gate insulator, we evaluated the dielectric properties of the p-OGI and its gate insulating performance upon fabricating solution processed OTFTs using an organic semiconductor (OSC), namely tetrathienoacene-DPP copolymer (PTDPPTFT4). Results show that the PTDPPTFT4 based OTFTs with this p-OGI exhibit field-effect mobilities up to 1 cm2 V−1 s−1, indicating the potential of high performance solution processed OTFT based on an epoxy based p-OGI/OSC system. |
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| Keywords: | Gate insulator Photo-patternability Organic thin-film transistor |
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