Carrier transport of inverted quantum dot LED with PEIE polymer |
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| Affiliation: | 1. Soft Innovative Materials Research Center, Korea Institute of Science and Technology, Eunhari san 101, Bongdong-eup, Wanju-gun, Jeonbuk 565-905, Republic of Korea;2. Interface Control Research Center, Future Convergence Research Division, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791, Republic of Korea;3. Department of Metallurgy and Materials Engineering, KU Leuven, 3001 Leuven, Belgium;1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi''an Jiaotong University, Xi''an, 710049, China;2. School of Physics and Optoelectronic Engineering, Xidian University, Xi''an, 710071, China;1. Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan;2. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan;1. Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, State Key Laboratory of Luminescent Materials and Devices, Guangzhou, 510640, PR China;2. Guangzhou New Vision Opto-Electronic Technology Co., Ltd., Guangzhou, 510730, China |
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| Abstract: | An inverted-type quantum-dot light-emitting-diode (QD LED), employing low-work function organic material polyethylenimine ethoxylated (PEIE) as electron injection layer, was fabricated by all solution processing method, excluding anode electrode. From transmission electron microscopy (TEM) and scanning electron microscopy (SEM) studies, it was confirmed that CdSe@ZnS QDs with 7 nm size were uniformly distributed as a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine (poly-TPD)] and 4,4′-N,N′-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I–V data. |
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| Keywords: | Charrier transport Inverted quantum dot LED Low-work function PEIE |
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