The role of water in the device performance of n-type PTCDI-C8 organic field-effect transistors with solution-based gelatin dielectric |
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| Affiliation: | 1. National University of Sciences and Technology, Islamabad, Pakistan;2. Polymer Electronics Research Laboratory, Gebze Institute of Technology, Gebze, Turkey;3. GIK Institute of Engineering Science and Technology, Swabi, Pakistan;4. Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33, Dushanbe, Tajikistan;5. Department of Physics, Gebze Institute of Technology, 41400 Kocaeli, Turkey;6. Tubitak MAM Material Institute, Photonic Technologies Group, TUBITAK, Gebze, Turkey;1. Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara, Turkey;2. Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipa?a Campus, Giresun 28100, Turkey;3. Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075, Turkey;1. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;2. New Vision Opto-Electronic Technology Co., Ltd., Guangzhou 510530, China;1. Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 136-713, Republic of Korea;2. Department of Chemistry, Research Institute of Nature Science (RINS), Gyeongsang National University, Jinju 660-701, Republic of Korea;3. Convergence Components & Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Republic of Korea;4. Nanocarbon Materials Research Center, Creative and Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon, Gyeongsangnamdo 642-120, Republic of Korea;1. School of Electrical and Electronic Engineering, University of Manchester, Sackville Street, Manchester M13 9PL, UK;2. Corrosion & Protection Centre, School of Materials, University of Manchester, The Mill, Sackville Street, Manchester M13 9PL, UK;3. School of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK |
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| Abstract: | Gelatin is a natural protein, which works well as the gate dielectric for N,N-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8) organic field-effect transistors (OFETs). An aqueous solution process was applied to form the gelatin gate dielectric on poly(ethylene terephthalate) (PET) by spin-coating and subsequent casting. The field-effect mobility in the saturation regime (μFE,sat) and the threshold voltage (VT) values of a typical 40 nm PTCDI-C8 OFET are (0.22 cm2 V?1 s?1, 55 V) in vacuum and (0.74 cm2 V?1 s?1, 2.6 V) in air ambient. The maximum voltage shift in hysteresis is also reduced from 10 V to 2 V when the operation environment for PTCDI-C8 OFETs is changed from vacuum to air ambient. Nevertheless, a slight reduction of electron mobility was found when the device was stressed in the air ambient. The change in the device performance has been attributed to the charged ions generation owing to water absorption in gelatin in air ambient. |
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| Keywords: | Gelatin OFET Hysteresis Bias stress |
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