Effect of trap states on the electrical doping of organic semiconductors |
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| Affiliation: | 1. School of Global Convergence Studies, Hanbat National University, San 16-1, Duckmyoung-dong, Daejeon 305-719, Republic of Korea;2. Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany;1. Institut für Angewandte Photophysik (IAPP), Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden, Germany;2. Institut für Photonische Technologien Jena (IPHT), Albert-Einstein-Straße 9, 07745 Jena, Germany;3. School of Physics & Astronomy, University of St Andrews, North Haugh, St Andrews KY16 9SS, Scotland, UK;1. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan, 030024, China;2. Key laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai, 200072, China;3. School of Physical Science and Electronics, Shanxi Datong University, Datong, 037009, China;4. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China;1. Higher Education Key Laboratory of New Microstructure Functional Materials in Shanxi province, Shanxi Datong University, Datong 037009, China;2. Key Laboratory of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, China;1. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01069, Dresden, Germany;2. Leibnitz Institute for Solid State and Materials Research, IFW, Helmholtzstraße 20, 01069, Dresden, Germany;3. Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany;1. Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea;2. Research Institute of Advanced Materials (RIAM), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea |
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| Abstract: | We demonstrate that direct charge transfer (CT) from trap states of host molecules to the p-dopant molecules raises the doping effect of organic semiconductors (OS). Electrons of the trap states in 4,4′-N,N′-dicarbazolyl-biphenyl (CBP) (EHOMO = 6.1 eV) are directly transferred to the p-dopant, 2,2′-(perfluoronaphthalene-2,6-diylidene) dimalononitrile (F6-TCNNQ) (ELUMO = 5.4 eV). This doping process enhances the conductivity of doped OS by different ways from the ordinary doping mechanism of generating free hole carriers and filling trap states of doped OS. Trap density and trap energy are analysed by impedance spectroscopy and it is shown that the direct charge transfer from deep trap states of host to dopants enhances the hole mobility of doped OS and the I–V characteristics of hole only devices. |
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| Keywords: | Organic semiconductor Doping mechanism Charge transport Trap states Impedance spectroscopy |
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