Restraints in low dimensional organic semiconductor devices at high current densities |
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| Affiliation: | 1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain;2. Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), 08193 Bellaterra, Spain;3. Dept. Enginyeria Electrònica, Universitat Politècnica Catalunya, 08034 Barcelona, Spain;4. Centre de Recerca en Nanoenginyeria (CrNE), 08028 Barcelona, Spain;1. Carbon Convergence Materials Research Center, Korea Institute of Science and Technology, San 101, Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do 565-905, Republic of Korea;2. Department of Nano-Material Engineering, University of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Republic of Korea;3. Soft Innovative Materials Research Center, Korea Institute of Science and Technology, San 101, Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do 565-905, Republic of Korea;1. Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105, USA;2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022, PR China;3. Department of Chemistry, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Wuhan University, Wuhan 430072, PR China;1. Department of Chemistry, College of Science, Shantou University, Shantou, Guangdong 515063, PR China;2. Institute of New Energy Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Science (CAS), Ningbo, Zhejiang 315201, PR China;1. Institut de Physique Theorique, CEA-Saclay, 91191 Gif-sur-Yvette, France;2. International Institute of Physics, UFRN, 59078-400 Natal-RN, Brazil;3. Instituto de Física, UFRGS, 91501-970 Porto Alegre-RS, Brazil;4. Institut Néel, Université Grenoble-Alpes, F-38042 Grenoble, France;5. Institut Néel, CNRS, F-38042 Grenoble, France;6. Laboratoire de Physique des Solides, CNRS - Université Paris-Sud, F-91405 Orsay, France;1. Department of Chemical Engineering & Biotechnology, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 10608, Taiwan;2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences #507, 519 Zhuangshi Avenue, Ningbo City, Zhejiang Province 315201, China;3. Department of Electronic Engineering, Kao Yuan University, 1821 Jhongshan Rd., Lujhu Dist., Kaohsiung 82151, Taiwan |
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| Abstract: | The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this operation mode for both, thin films and single crystals, comparable densities of free and gate-induced charge carriers were estimated. Kelvin probe microscopy was used to measure the contact potential difference and the electrical field along the transistor channel during device operation exhibiting the formation of local space charges in the high current density regime. |
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| Keywords: | High current densities Organic field-effect transistor Transconductance Kelvin probe microscopy Space charges |
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